電機工程學系
Permanent URI for this communityhttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/85
歷史沿革
本系成立宗旨在整合電子、電機、資訊、控制等多學門之工程技術，以培養跨領域具系統整合能力之電機電子科技人才為目標，同時配合產業界需求、支援國家重點科技發展，以「系統晶片」、「多媒體與通訊」、與「智慧型控制與機器人」等三大領域為核心發展方向，期望藉由學術創新引領產業發展，全力培養能直接投入電機電子產業之高級技術人才，厚植本國科技產業之競爭實力。
本系肇始於民國92年籌設之「應用電子科技研究所」，經一年籌劃，於民國93年8月正式成立，開始招收碩士班研究生，以培養具備理論、實務能力之高階電機電子科技人才為目標。民國96年8月「應用電子科技學系」成立，招收學士班學生，同時間，系所合一為「應用電子科技學系」。民國103年8月更名為「電機工程學系」，民國107年電機工程學系博士班成立，完備從大學部到博士班之學制規模，進一步擴展與深化本系的教學與研究能量。
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Item A V-band fully-integrated CMOS distributed active transformer power amplifier for 802.15.TG3c wireless personal area network applications(2008-10-15) Yung-Nien Jen; Jeng-Han Tsai; Tian-Wei Huang; Huei WangA 60-GHz fully-integrated and broadband distributed active transformer (DAT) power amplifier (PA) is implemented in 90-nm CMOS technology. The PA performs a flat small signal gain of 26 plusmn 1 dB from 57 to 69 GHz which covers full band for 60-GHz wireless personal network (WPAN) applications. By using the DAT output combine structure, this PA delivers 18-dBm measured output power with 12.2% PAE at 60 GHz with a compact chip size. To the best of our knowledge, this DAT CMOS PA demonstrates the highest output power among the reported 60-GHz CMOS PAs to date.Item A 68-83-GHz power amplifier in 90 nm standard CMOS(2009-06-12) Jeffrey Lee; Chung-Chun Chen; Jeng-Han Tsai; Kun-You Lin; Huei WangA balanced PA covering 68-83 GHz is developed in 90 nm CMOS. Using wideband power matching topology, the PA achieves power gain of greater than 18.1 dB from 68 to 83 GHz and gain flatness within 0.2 dB from 68 to 78 GHz. The PA has a maximum saturation output power of 14 dBm at 70 GHz, and greater than 11.8 dBm from 68 to 83 GHz. The best P1dB is 12 dBm at 68 GHz, and greater than 8.3 dBm from 68 to 83 GHz.Item A 25-75-GHz broadband Gilbert-cell mixer using 90-nm CMOS technology(IEEE Microwave Theory and Techniques Society, 2007-04-01) Jeng-Han Tsai; Pei-Si Wu; Chin-Shen Lin; Tian-Wei Huang; John G.J. Chern; Wen-Chu Huang; Huei WangA compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3plusmn2dB measured conversion gain (to 50-Omega load) from 25 to 75GHz with a compact chip size of 0.30mm2. The OP1 dB of the mixer is 1dBm and -4dBm at 40 and 60GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to dateItem A V-band VCO using fT-doubling technique in 0.18-μm CMOS(2011-12-08) Yen-Hung Kuo; Jeng-Han Tsai; Tian-Wei Huang; Huei WangA low supply voltage V-band voltage-controlled oscillator (VCO) using fT-doubling technique is presented in this paper. The proposed VCO is fabricated in 0.18-μm CMOS technology. The proposed VCO adopts the fT-doubling technique to eliminate the gate-to-source capacitance of cross-coupled pair of VCO. The oscillation frequency of VCO can be increased due to the parasitic capacitance is eliminated. The measured results show that the proposed VCO have tuning range of 0.74 GHz from 58.09-to-58.83 GHz. The proposed VCO consumes 4 mW dc power from 1.2 V supply voltage.Item A 30-100-GHz wideband sub-harmonic active mixer in 90-nm CMOS technology(IEEE Microwave Theory and Techniques Society, 2008-08-01) Jeng-Han Tsai; Hong-Yuan Yang; Tian-Wei Huang; Huei WangThis letter presents a 30-100 GHz wideband and compact fully integrated sub-harmonic Gilbert-cell mixer using 90 nm standard CMOS technology. The sub-harmonic pumped scheme with advantages of high port isolation and low local oscillation frequency operation is selected in millimeter-wave mixer design. A distributed transconductance stage and a high impedance compensation line are introduced to achieve the flatness of conversion gain over broad bandwidth. The CMOS sub-harmonic Gilbert-cell mixer exhibits -1.5 plusmn 1.5 dB measured conversion gain from 30 to 100 GHz with a compact chip size of 0.35 mm2. The OP1 dB of the mixer is -10.4 dBm and -9.6 dBm at 77 and 94 GHz, respectively. To the best of our knowledge, the monolithic microwave integrated circuit is the first CMOS Gilbert-cell mixer operating up to 100 GHz.Item A 86- to 108-GHz Amplifier in 90-nm CMOS(IEEE Microwave Theory and Techniques Society, 2008-02-01) Yu-Sian Jiang; Zuo-Min Tsai; Jeng-Han Tsai; Hsien-Te Chen; Huei WangThis letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date.Item A W-band medium power amplifier in 90 nm CMOS(IEEE Microwave Theory and Techniques Society, 2008-12-01) Yu-Sian Jiang; Jeng-Han Tsai; Huei WangA W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (P sat) is 12 dBm between 90 and 100 GHz for V ds of each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date.Item A novel reduced-size rat-race broadside coupler and its application for CMOS distributed sub-harmonic mixer(IEEE Microwave Theory and Techniques Society, 2008-03-01) Chun-Lin Kuo; Che-Chung Kuo; Chun-Hsien Lien; Jeng-Han Tsai; Huei WangA broadband distributed sub-harmonic resistive field effect transistor mixer with a novel modified rat-race broadside coupler using a 0.13-mum CMOS foundry process is presented in this letter. Using the broadside coupler, a reduced-size rat-race is fabricated with a compact size of 110 times 80 mum2. From the measurement results, the mixer achieved a conversion loss of 12 dB from 32 to 70 GHz of RF frequency. The passive sub-harmonic mixer has zero power consumption. With the modified rat-race broadside coupler, the mixer achieves a good LO-IF isolation of better than 30 dB and a compact core chip size of 0.55 times 0.4 mm2.Item Design and Analysis of A 55 to 71-GHz Compact and Broadband Distributed Active Transformer Power Amplifier in 90-nm CMOS Process(IEEE Microwave Theory and Techniques Society, 2009-07-01) Yung-Nien Jen; Jeng-Han Tsai; Tian-Wei Huang; Huei WangA 55-71-GHz fully integrated power amplifier (PA) using a distributed active transformer (DAT) is implemented in 90-nm RF/MS CMOS technology. The DAT combiner, featuring efficient power combination and direct impedance transformation, is suitable for millimeter-wave (MMW) PA design. Systematic design procedures including an impedance allocation plan, a compensation line, and a gain boosting technique are presented for the MMW DAT PA. The monolithic microwave integrated circuit (MMIC) performs a high and flat small-signal gain of 26 plusmn1.5 dB from 55 to 71 GHz, which covers a full band for 60-GHz wireless personal area network applications. Using cascode devices and a DAT four-way power combination, the CMOS PA delivers 14.5- and 18-dBm saturated output power with 10.2% and 12.2% power-added efficiency under 1.8- and 3-V supply voltage, respectively, at 60 GHz. The maximum linear output power (P1 dB) is 14.5 dBm. To the best of our knowledge, the MMIC is the first demonstration of a V-band CMOS PA using a DAT combining scheme with highest linear output power among the reported 60-GHz CMOS PAs to date.Item Design and analysis of a 0.8-77.5-GHz ultra-broadband distributed drain mixer using 0.13-μm CMOS technology(IEEE Microwave Theory and Techniques Society, 2009-03-01) Hong-Yuan Yang; Jeng-Han Tsai; Chi-Hsueh Wang; Chin-Shen Lin; Wei-Heng Lin; Kun-You Lin; Tian-Wei Huang; Huei WangA compact and broadband 0.8-77.5-GHz passive distributed drain mixer using standard 0.13-mum CMOS technology is presented in this paper. To extend the operation bandwidth, a uniform distributed topology is utilized for wideband matching. This paper also analyzes the device size and number of stages for the bandwidth of the CMOS distributed drain mixer. To optimize the conversion gain performance of the CMOS drain mixer, a gate bias optimization method is proposed and successfully implemented in the mixer design. This mixer consumes zero dc power and exhibits a measured conversion loss of 5.5 plusmn1 dB from 0.8 to 77.5 GHz with a compact size of 0.67 0.58 mm2 . The output 1-dB compression point is -8.5 dBm at 20 GHz. To best of our knowledge, this monolithic microwave integrated circuit has the widest operation bandwidth among CMOS wideband mixers to date with good conversion efficiency and zero dc power consumption.