Characteristics of In-Ge-Sb-Sn-Te Thin Film Used for Phase Change Optical Recording Media

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dc.contributor國立臺灣師範大學機電工程學系zh_tw
dc.contributor.authorOu, Sin-Liangen_US
dc.contributor.authorCheng, Chin-Paoen_US
dc.contributor.authorYeh, Chin-Yenen_US
dc.contributor.authorChung, Chung-Jenen_US
dc.contributor.authorKao, Kuo-Shengen_US
dc.contributor.authorLin, Re-Chingen_US
dc.date.accessioned2014-10-30T09:36:03Z
dc.date.available2014-10-30T09:36:03Z
dc.date.issued2011-02-01zh_TW
dc.description.abstractThe In10GexSb52-xSn23Te15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb52-xSn23Te15 films with x = 2~9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.en_US
dc.identifierntnulib_tp_E0401_01_025zh_TW
dc.identifier.issn1022-6680zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/36811
dc.languageenzh_TW
dc.publisherTrans Tech Publicationsen_US
dc.relationAdvanced Materials Research, Manufacturing Process Technology, 189-193, 4430-4433.en_US
dc.relation.urihttp://dx.doi.org/10.4028/www.scientific.net/AMR.189-193.4430zh_TW
dc.subject.otherIn-Ge-Sb-Sn-Teen_US
dc.subject.otherPhase Change Optical Recordingen_US
dc.subject.otherThin Filmen_US
dc.titleCharacteristics of In-Ge-Sb-Sn-Te Thin Film Used for Phase Change Optical Recording Mediaen_US

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