CuB2O4晶體在第一原理的研究

dc.contributor陳穎叡zh_TW
dc.contributorChen, Yiing-Reien_US
dc.contributor.author王俊凱zh_TW
dc.contributor.authorWang, Chun-Kaien_US
dc.date.accessioned2019-09-05T02:10:22Z
dc.date.available2019-02-28
dc.date.available2019-09-05T02:10:22Z
dc.date.issued2019
dc.description.abstract研究CuB2O4反鐵磁性材料在第一原理中的能帶架構以及材料特性。 CuB2O4在第一原理中,使用六個單元的方式呈現週期性的結構分布,在這個晶格中a=11.357、c=5.542 Å, k-mesh使用4x4x4, nbands為400 並且使用VASP GGA+U的方法,其中Cu(A)&Cu(B)的U分別為U1=6.4eV, U2=7.0eV。 在計算中,我們發現CuB2O4的density of state(DOS)在導帶的地方會出現兩個非常明顯的尖點。一個是由Cu(A)&O(1)組成,另外一個則是由Cu(B)&O(2)&O(3)&O(4)所貢獻,因此我們希望可以分析出兩者的不同。zh_TW
dc.description.abstractAb initio study of anti-ferromagnetic non-collinear CuB2O4 crystal ,CuB2O4 crystallizes in first-principles calculations, with six formula units were performed using periodic density function theory. The cell of dimensions a=11.357 and c=5.542 Å, k-mesh=4x4x4, nbands=400 and use GGA+U on VASP where U1=6.4eV, U2=7.0eV for Cu(A)&Cu(B).In the case, we found that CuB2O4’s density of state(DOS) has two peaks in conduction band. One is contributed by Cu(A) & O(1), the other one is contributed by Cu(B) & O(2) & O(3) & O(4). As the result of, we can sort atoms to two types. A type is Cu(A) and O(1) which donate states to peak(1), the other type is Cu(B) and O(2)&O(3)&O(4) which donate states to peak(2). And we could do analyze their difference.en_US
dc.description.sponsorship物理學系zh_TW
dc.identifierG060441022S
dc.identifier.urihttp://etds.lib.ntnu.edu.tw/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=id=%22G060441022S%22.&%22.id.&
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/102504
dc.language中文
dc.subject第一原理zh_TW
dc.subject晶體結構zh_TW
dc.subject能帶分析zh_TW
dc.subjectAb initioen_US
dc.subjectVASPen_US
dc.subjectfirst-proncipleen_US
dc.subjectCuB2O4en_US
dc.subjectnon-collinear calculationen_US
dc.titleCuB2O4晶體在第一原理的研究zh_TW
dc.titleAb initio study of the anti-ferromagnetic, non-collinear CuB2O4 crystalen_US

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