熱處理對氧化銦錫薄膜特性之研究
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2012
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Abstract
藉由射頻磁控濺射(RF Magnetron sputter)技術在P型矽上鍍上N型的ITO薄膜，沉積之後在不同的溫度及厚度條件下進行退火，並觀察薄膜結構與光電特性之變化。透過XRD來觀察薄膜的晶態結構，發現薄膜呈現非晶態結構，在熱退火後薄膜會朝向(222)的方向形成多晶成長的晶格排列。從光電特性中發現，所有ITO薄膜在波長400~900 nm下擁有將近90% 的透光率。能帶間隙大約介於3.47~3.73 eV，實驗顯示增加退火溫度，能帶間隙也會跟著增加，但是薄膜厚度增加，能帶間隙反而會跟著減少。在導電特性上，在100 nm的ITO薄膜於600℃以及純氮氣的退火環境下，可以得到最小片電組(24.79Ω/□)以及電阻率(2.48x10-4 Ωcm)。從電容-電壓特性曲線所量測到的電容大小，我們可以發現到，當ITO薄膜厚度為100 nm且600℃的退火條件下，可以得到較大的電容量(約為387.5 pF)以及較大的儲存電量。因此ITO薄膜擁有良好的特質並且適合做為太陽能電池方面的應用。
N-type ITO thin films were deposited on p-Si at room temperature by RF sputtering in argon ambient. The thickness of ITO film ranges from 100 to 300 nm. After deposition, the films were annealed at 400, 500 or 600℃ and the heat treatment was performed in N2 ambient. This study investigates the effect ofpost-deposition heat treatment on structural, optical and electrical properties of the ITO films. The ITO films were of good quality and therefore suitable for applications in solar cells.
N-type ITO thin films were deposited on p-Si at room temperature by RF sputtering in argon ambient. The thickness of ITO film ranges from 100 to 300 nm. After deposition, the films were annealed at 400, 500 or 600℃ and the heat treatment was performed in N2 ambient. This study investigates the effect ofpost-deposition heat treatment on structural, optical and electrical properties of the ITO films. The ITO films were of good quality and therefore suitable for applications in solar cells.
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熱處理, 氧化銦錫, 電阻率, 透光率, Heat treatment, ITO, Resistivity, Transmittance