電機工程學系

Permanent URI for this communityhttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/85

歷史沿革

本系成立宗旨在整合電子、電機、資訊、控制等多學門之工程技術,以培養跨領域具系統整合能力之電機電子科技人才為目標,同時配合產業界需求、支援國家重點科技發展,以「系統晶片」、「多媒體與通訊」、與「智慧型控制與機器人」等三大領域為核心發展方向,期望藉由學術創新引領產業發展,全力培養能直接投入電機電子產業之高級技術人才,厚植本國科技產業之競爭實力。

本系肇始於民國92年籌設之「應用電子科技研究所」,經一年籌劃,於民國93年8月正式成立,開始招收碩士班研究生,以培養具備理論、實務能力之高階電機電子科技人才為目標。民國96年8月「應用電子科技學系」成立,招收學士班學生,同時間,系所合一為「應用電子科技學系」。民國103年8月更名為「電機工程學系」,民國107年電機工程學系博士班成立,完備從大學部到博士班之學制規模,進一步擴展與深化本系的教學與研究能量。

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    A Q-band miniature monolithic subharmonically pumped resistive mixer
    (2006-12-01) Shih-Yu Chen; Jeng-Han Tsai; Pei-Si Wu; Tian-Wei Huang; Huei Wang
    This paper proposes a miniature Q-band monolithic subharmonically pumped resistivemixer, consisting of two pHEMT transistors, a LOreduced-size Marchand balun and RF/IF filters. Thecompact RF/IF diplex circuit and a reduced-sizebalun were used to minimize the chip size whichresults only 0.72 mm 2 . Besides, 5 dBm LO inputpower is needed which is one-third of othersubharmonically pumped mixers with more than 10dBm LO power. This mixer exhibits 12.5 � 1.5 dBup-conversion loss and 12 � 1 dB down-conversionloss with 5 dBm LO input power. Up-conversion 1-dB compression output power is -15dBm and down-conversion 1-dB compression output power is -12dBm. To our knowledge, this mixer has goodconversion with smallest chip size and minimum LOinput power.
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    Minimum ACPR “sweet-spot” using statistical power distribution function
    (2006-12-15) Jeng-Han Tsai; Shih-Yu Chen; Wei-Chien Chen; Tian-Wei Huang
    During the linearity optimization, the ACPR improvement is quite different from the inter-modulation third-order distortion ratio (IM3R) improvement, but there exist some relation between ACPR and IM3R To correlate the IM3R and ACPR, we propose the statistical probability density function (PDF) method to predict the relation between the ACPR improvement and the IM3R improvement for weekly nonlinear amplifiers. There is a 10 dB difference between measured ACPR and IM3R near sweet spot region, however, through our modification process, only 2-3 dB difference between our theoretical prediction and measured ACPR exist. Two of the modulation signals, W-CDMA and QPSK, have been proved that the prediction of ACPR from two-tone IM3R can be much closed to the measured one as long as the modified PDF term is utilized.
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    The Low-Cost RF-CMOS 60-GHzTransceiver
    (2007-03-01) Tian-Wei Huang; Chi-Hsueh Wang; Hong-Yeh Chang; Pei-Si Wu; Kun-You Lin; Jeng-Han Tsai,Chin-Shen Lin; Huei Wang; Chun Hsiung Chen
  • Item
    Minimum ACPR “sweet-spot“ using statistical power distribution function
    (2006-12-15) Jeng-Han Tsai,Shih-Yu Chen,Wei-Chien Chen; Tian-Wei Huang
    During the linearity optimization, the ACPR improvement is quite different from the inter-modulation third-order distortion ratio (IM3R) improvement, but there exist some relation between ACPR and IM3R To correlate the IM3R and ACPR, we propose the statistical probability density function (PDF) method to predict the relation between the ACPR improvement and the IM3R improvement for weekly nonlinear amplifiers. There is a 10 dB difference between measured ACPR and IM3R near sweet spot region, however, through our modification process, only 2-3 dB difference between our theoretical prediction and measured ACPR exist. Two of the modulation signals, W-CDMA and QPSK, have been proved that the prediction of ACPR from two-tone IM3R can be much closed to the measured one as long as the modified PDF term is utilized.
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    40-48 GHz sub-harmonic transceiver for high data-rate communication system applications
    (2008-04-24) Jeng-Han Tsai; To-Po Wang; Kun-You Lin; Tian-Wei Huang; Yi-Cheng Lin; Hsin-Chia Lu; Huei Wang
    A 40-48 GHz sub-harmonic transceiver module for millimeter-wave (MMW) high data-rate communication systems has been developed in this paper. The highlights are a sub-harmonic transmitter with 12 plusmn 3 dB conversion gain, a power amplifier with 17 plusmn 2 dBm output power, a low noise amplifier with 5 plusmn 1.5 dB noise figure, and a sub-harmonic mixer with 15 plusmn 3 dB conversion loss from 40 to 48 GHz. Furthermore, two kinds of MMW high data-rate communication applications using the 40-48 GHz sub-harmonic transceiver module were demonstrated. The experimental results show that the 40-48 GHz transceiver has Gigabit transmission capability.
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    A 30-60GHz CMOS sub-harmonic IQ de/modulator for high data-rate communication system applications
    (2009-01-22) Wei-Heng Lin; Wei-Lun Chang; Jeng-Han Tsai; Tian-Wei Huang
    A 30-60 GHz sub-harmonic IQ de/modulator using TSMC CMOS 0.13-mum process is presented in this paper. The IQ de/modulator consists of two FET resistive mixers, a 90deg coupler, and a Wilkinson power divider. The resistive mixer could simultaneously used as a up-converted or a down-converted mixer. Therefore, the measurement of the FET resistive mixer based modulator or demodulator will be done. The die size is 0.78 mm times 0.58 mm. Both IQ demodulator and modulator feature the conversion loss of -16plusmn1 dB and good demodulation and modulation capacity.
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    A 50-to-62GHz wide-locking-range CMOS injection-locked frequency divider with transformer feedback
    (2008-06-17) Yu-Hang Wong; Wei-Heng Lin; Jeng-Han Tsai; Tian-Wei Huang
    A 50-to-62 GHz injection-locked frequency divider (ILFD) with transformer feedback technique is designed in 0.13-mum CMOS technology for wide locking range. The measurement results show that the free-running frequency is 55.3 GHz and the total locking range is 12 GHz (>20%) at the input power level of 0 dBm while consuming 10.8 mW from a 0.9 V power supply. The phase noise of the divider is -124.93 dBc/Hz at 1 MHz offset from the carrier. This wide locking range ILFD is suitable for integration into a phase-lock-loop (PLL) system because of its small size and no need of extra control signal.
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    V-band fully-integrated CMOS LNA and DAT PA for 60 GHz WPAN applications
    (2010-09-30) Wei-Heng Lin; Yung-Nien Jen; Jeng-Han Tsai; Hsin-Chia Lu; Tian-Wei Huang
    A V-band low-noise amplifier (LNA) and a distributed active transformer (DAT) power amplifier (PA) using 130 nm standard MS/RF CMOS technology are presented in this paper. The three-stage LNA features 20�0.5 dB flat gain from 56-64 GHz and the minimum noise figure is 6.9 dB at 60 GHz at 2.4-V supply. The three-stage PA with four-time power combination in DAT structure achieves a peak gain of 21.1 dB at 58 GHz, OP1dB of 8.34 dBm, Psat of 13 dBm, and PAE of 6.4% under 2.4-V supply voltage. It also achieves 17.5 dB gain, OP1dB of 6.74 dBm, Psat of 11.6 dBm, and 4.4% PAE at 60 GHz. Thin-film microstrip line is used for matching circuits and compact the chip size, the LNA and PA die area including all pads are 0.67 � 0.57 and 0.85 � 0.80 mm2, respectively. The LNA and PA MMICs demonstrate the superior gain and power performance in 130-nm CMOS process.
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    A miniature 38-48 GHz MMIC sub-harmonic transmitter with post-distortion linearization
    (2007-06-08) Jeng-Han Tsai; Tian-Wei Huang
    This paper presents a miniature 38-48 GHz sub-harmonic transmitter with post-distortion linearization using a 0.15-mum GaAs HEMT process. The transmitter, which integrates a sub-harmonic mixer, a band-pass driver amplifier, and a linearizer, has a compact chip size of 2.5 mm2 with conversion gain of 7 plusmn 1.5 dB from 38 to 48 GHz. With the features of the sub-harmonic mixer and band-pass driver amplifier, the 2fLO leakage rejection of the transmitter is 47 dB. For the linearity of the transmitter, a post-distortion linearizer is added. After linearization, the output spectrum re-growth can be suppressed by 8 dB at 40 GHz. To keep ACPR below -35 dBc, the output power has been increased from -2 to 1 dBm, which means the linear output power has been doubled after linearization.