電機工程學系

Permanent URI for this communityhttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/85

歷史沿革

本系成立宗旨在整合電子、電機、資訊、控制等多學門之工程技術，以培養跨領域具系統整合能力之電機電子科技人才為目標，同時配合產業界需求、支援國家重點科技發展，以「系統晶片」、「多媒體與通訊」、與「智慧型控制與機器人」等三大領域為核心發展方向，期望藉由學術創新引領產業發展，全力培養能直接投入電機電子產業之高級技術人才，厚植本國科技產業之競爭實力。

本系肇始於民國92年籌設之「應用電子科技研究所」，經一年籌劃，於民國93年8月正式成立，開始招收碩士班研究生，以培養具備理論、實務能力之高階電機電子科技人才為目標。民國96年8月「應用電子科技學系」成立，招收學士班學生，同時間，系所合一為「應用電子科技學系」。民國103年8月更名為「電機工程學系」，民國107年電機工程學系博士班成立，完備從大學部到博士班之學制規模，進一步擴展與深化本系的教學與研究能量。

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系所網址：https://www.ee.ntnu.edu.tw/

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Author: search.filters.author.Chun-Hsien LienHas files: No

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    A high-efficiency, broadband and high output power PHEMT balanced K-band doubler with integrated balun
    (2006-12-15) Wen-Ren Lee,Shih-Fong Chao; Zuo-Min Tsai,Pin-Cheng Huang; Chun-Hsien Lien; Jeng-Han Tsai; Huei Wang
    A high-efficiency and high output power K-band frequency doubler using InGaAs PHEMT power device is developed, which features high fundamental frequency rejection, high efficiency, good conversion gain over wide bandwidth, and high output power. A compact lumped rat-race hybrid and an output buffer amplifier are implemented on chip for a balanced design and high output power. The circuit exhibits measured conversions gain about 8 dB over the output frequencies from 12 to 22 GHz. The fundamental frequency suppression is better than 20 dB and the second harmonic saturation output power is higher than 12 dBm with a miniature chip size of 2 mm x 1 mm.
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    A high-efficiency, broadband and high output power pHEMT balanced K-band doubler with integrated balun
    (2006-12-15) Wen-Ren Lee; Shih-Fong Chao; Zuo-Min Tsai; Pin-Cheng Huang; Chun-Hsien Lien; Jeng-Han Tsai; Huei Wang
    A high-efficiency and high output power K-band frequency doubler using InGaAs PHEMT power device is developed, which features high fundamental frequency rejection, high efficiency, good conversion gain over wide bandwidth, and high output power. A compact lumped rat-race hybrid and an output buffer amplifier are implemented on chip for a balanced design and high output power. The circuit exhibits measured conversions gain about 8 dB over the output frequencies from 12 to 22 GHz. The fundamental frequency suppression is better than 20 dB and the second harmonic saturation output power is higher than 12 dBm with a miniature chip size of 2 mm x 1 mm.
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    A novel reduced-size rat-race broadside coupler and its application for CMOS distributed sub-harmonic mixer
    (IEEE Microwave Theory and Techniques Society, 2008-03-01) Chun-Lin Kuo; Che-Chung Kuo; Chun-Hsien Lien; Jeng-Han Tsai; Huei Wang
    A broadband distributed sub-harmonic resistive field effect transistor mixer with a novel modified rat-race broadside coupler using a 0.13-mum CMOS foundry process is presented in this letter. Using the broadside coupler, a reduced-size rat-race is fabricated with a compact size of 110 times 80 mum2. From the measurement results, the mixer achieved a conversion loss of 12 dB from 32 to 70 GHz of RF frequency. The passive sub-harmonic mixer has zero power consumption. With the modified rat-race broadside coupler, the mixer achieves a good LO-IF isolation of better than 30 dB and a compact core chip size of 0.55 times 0.4 mm2.