機電工程學系
Permanent URI for this communityhttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/84
系所沿革
為迎合產業機電整合人才之需求,本校於民國 91年成立機電科技研究所,招收碩士班學生;隨後並於民國93年設立大學部,系所整合為「機電科技學系」,更於101學年度起招收博士班學生。103學年度本系更名為「機電工程學系」,本系所之發展方向與目標,係配合國家政策、產業需求與技術發展趨勢而制定。本系規劃專業領域包含「精密機械」及「光機電整合」 為兩大核心領域, 使學生不但學有專精,並具跨領域的知識,期能強化學生之應變能力,以適應多元變化的明日社會。
教學目標主要希望教導學生機電工程相關之基本原理與實務應用的專業知能,並訓練學生如何運用工具進行設計、執行、實作與驗證各項實驗,以培養解決機電工程上各種問題所需要的獨立思考與創新能力。
基於建立系統性的機電工程整合教學與研究目標,本系學士班及研究所之教育目標如下:
一、學士班
1.培育具備理論與實作能力之機電工程人才。
2.培育符合產業需求或教育專業之機電工程人才。
3.培育具備人文素養、專業倫理及終身學習能力之機電工程人才。
二、研究所
1.培育具備機電工程整合實務能力之專業工程師或研發人才。
2.培育機電工程相關研究創新與產業應用之專業工程師或研發人才。
3.培育具備人文素養、專業倫理及終身學習能力之專業工程師或研發人才。
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Item Fabrication of nanoporous antireflection surfaces on silicon(Elsevier, 2008-11-01) Huang, Mao-Jung; Yang, Chii-Rong; Chiou, Yuang-Cherng; Lee, Rong-TsongAfter the surface of a silicon wafer has been texturized, the reflectance of the wafer surface can be reduced to increase the power generation efficiency of a silicon-based solar cell. This study presents the integration of self-assembled nanosphere lithography (SANSL) and photo-assisted electrochemical etching (PAECE) to fabricate a nanostructure array with a high aspect ratio on the surface of silicon wafer, to reduce its reflectance. The experimental results show that the etching depth of the fabricated nanopore array structure is about View the MathML source and its diameter is about 90 nm, such that the aspect ratio of the pore can reach about 68:1. The weighted mean reflectance of a blank silicon wafer is 40.2% in the wavelength range of 280–890 nm. Five-minute PAECE without SANSL reduces the weighted mean reflectance to 5.16%. Five-minute PAECE with SANSL reduces the weighted mean reflectance to 1.73%. Further coating of a 200 Å thick silicon nitride layer on the surface of a nanostructure array reduces the weighted mean reflectance even to 0.878%. The novel fabrication technology proposed in this study has the advantage of being low cost, and the fabricated nanostructure array can be employed as an antireflection structure in single crystalline silicon solar cells.Item Effects of various ion-typed surfactants on silicon anisotropic etching properties in KOH and TMAH solutions(Elsevier, 2005-03-28) Yang, Chii-Rong; Chen, Po-Ying; Yang, Cheng-Hao; Chiou, Yuang-Cherng; Lee, Rong-TsongThree ion-typed surfactants, including anionic SDSS, cationic ASPEG and non-ionic PEG, which are powerful wetting agents in electroforming, were added to 30 wt.% KOH and 10 wt.% TMAH solutions to evaluate the silicon anisotropic etching properties of the (1 0 0) silicon plane without agitation and no IPA additive. The results indicate that the surfactant ion-types are not the main determinants of the silicon anisotropic etching properties in KOH and TMAH solutions. The wetting capacity of the etchants causes the efficacies of the etchants on the roughness to follow the order anionic SDSS, cationic ASPEG, non-ionic PEG and pure solution in KOH solutions, and the order cationic ASPEG, non-ionic PEG, pure solution and anionic SDSS in TMAH solutions, especially at higher etching temperatures. Moreover, the chemical activities of etchants differ so that the etching rates follow the order anionic SDSS, pure solution, non-ionic PEG and cationic ASPEG in KOH solutions, and the order anionic SDSS, pure solution, cationic ASPEG and non-ionic PEG in TMAH solutions at a given etching temperature. Anionic SDSS has the highest etching rate of 5.4 μm/min and the lowest surface roughness of 7.5 nm, which are about 1.69 times higher and 7.87 times lower, respectively, than those obtained in pure KOH solution. The cationic ASPEG has a reasonable etching rate of 0.7 μm/min and the lowest surface roughness of 4 nm in TMAH solutions for etching temperature of 100 °C. Furthermore, the surfactants used here were demonstrated to allow the utilization of usual mask materials and anionic SDSS can even increase the selectivity of silicon dissolution toward silicon dioxide in KOH solutions. A drastic reduction of the undercutting of the convex corners is obtained in TMAH solutions with non-ionic PEG surfactant. This finding reveals that the addition of non-ionic PEG to TMAH solutions is ideal when accurate profiles are required without extremely deep etching.Item Realization of silicon nanostructure arrays using photo-assisted electrochemical etching(Elsevier, 2008-01-01) Huang, Mao-Jung; Chii-Rong; Lee, Rong-Tsong; Chiou, Yuang-CherngItem Effects of mechanical agitation and surfactant additive on silicon anisotropic etching in alkaline KOH solution(Elsevier, 2005-03-28) Yang, Chii-Rong; Chen, Po-Ying; Chiou, Yuang-Cherng; Lee, Rong-TsongAgitation is a key method that significantly affects silicon wet anisotropic etching quality including the etching rate and surface roughness. This study introduced the ultrasonic agitation to improve the roughness quality of etched (1 0 0) silicon plane in 30 wt.% KOH solution. These etching characteristics have been compared with those using magnetic stirring and no agitation. In ultrasonic agitation condition, the etching rate increases linearly with agitating power, but the surface roughness worsens. Although the etching rate always exceeds 1.2 μm/min and the average roughness, Ra is below 15 nm, the membrane microstructures are damaged easily by ultrasonic agitation. Moreover, the KOH solution with added anionic surfactant, dihexyl ester of sodium sulfosuccinic acid, is also used to evaluate the etching properties of (1 0 0) silicon under without agitation. Owing to increasing hydrophilic ability between the hydrogen bubble and silicon surface and the effect of silicon wettability, the etching properties are promoted drastically. Experimental results show that the average roughness, Ra can be reduced to 7.5 nm in aqueous KOH with anionic surfactant, which is about eight times better than achieved by the pure KOH solution without agitation for etching temperature of 100 °C. Meanwhile, the etching rate can be enhanced to 4.9 μm/min, which is 1.44 times better than that is obtainable in a pure KOH solution with ultrasonic agitation. The etching rate of the KOH solution with added surfactant is about twice that in the KOH solution with isopropyl alcohol (IPA) for etching temperature of 80 °C. Furthermore, this study also illustrates the reflectivity of etched surface for visible wavelength and the fabrication of thin film microstructures.